60V N-CHANNEL ENHANCEMENT MODE MOSFET DMT6005LSS
AO4260替代型号DMT6005LSS 60V Features and Benefits
BVDSS RDS(ON) Max 6m? @ VGS = 10V 8.9m? @ VGS = 4.5V ID Max TA = 25°C 13.5A 11.3A ? ?
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High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Mechanical Data
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Case: SO-8
Case Material: Molded Plastic, \UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate)
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SO-8
S S S G Top View
D D D D D
G
S Equivalent circuit
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number DMT6005LSS-13 Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, \and Lead-free.
3. Halogen- and Antimony-free \ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8 5 T6005LS YY WW 1 4 = Manufacturer’s Marking
T6005LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 15 = 2015) WW = Week (01 to 53)
DMT6005LSS
Document number: DS38291 Rev. 2 - 2
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage Characteristic Symbol VDSS VGSS Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID ID IS IDM IAS EAS Continuous Drain Current (Note 6) VGS = 10V Value 60 ±20 13.5 10.8 18.1 14.4 3 80 14.8 98 Unit V V A A A A A mJ Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Avalanche Current, L = 1mH Avalanche Energy, L = 1mH
Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Steady State t<10s Steady State t<10s Characteristic Symbol PD R?JA PD RθJA RθJC TJ, TSTG Value 1.3 93 53 1.7 73 41 12.7 -55 to +150 Unit W °C/W °C/W W °C/W °C/W °C/W °C
Electrical Characteristics (TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(TH) Min 60 — — 1 — — — — — — — — — — — — — — — — — — Typ — — — — 5 5.7 6.7 0.9 2962 965 60 0.66 47.1 23.1 10.2 12.5 8.3 9.4 22 8.9 40.4 49.7 Max — 1 ±100 3 6 7.2 8.9 1.2 — — — — — — — — — — — — — — Unit V μA nA V Test Condition VGS = 0V, ID = 250μA VDS = 48V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 6V, ID = 20A VGS = 4.5V, ID = 12.5A VGS = 0V, IS = 20A Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes:
RDS(ON) VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR m? V pF ? VDS = 30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 30V, ID = 20A nS nS nC VDD = 30V, VGS = 10V, ID = 20A, Rg = 3.3? IF = 20A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
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50.0
ID, DRAIN CURRENT (A) 40.0
VGS = 4.5V VGS=5.0V VGS = 6.0V VGS = 10.0V 30
VGS = 4.0V ID, DRAIN CURRENt (A) 25 20 15 10 5
VGS = 3.0V 0
VDS = 5V 30.0
20.0
VGS = 3.5V 10.0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic
125℃ 150℃ 85℃ 25℃ -55℃ 1
2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic
6
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (?) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (?) 0.01 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 0.001
0.01 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 0.001
0
ID = 20A VGS = 4.5V VGS = 6.0V ID = 12.5A VGS = 10V 10 20 30 40 50 60 70 80 90 100
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage 0
0
4
8
12
16
20
VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (?) 0.009
0.008
0.007
0.006
0.005
0.004 0.003
0.002
0.001
0
10
VGS = 10V
125℃ 85℃ RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.01
1.8
2
150℃ 1.6 1.4 1.2 1 0.8
VGS = 10V, ID = 50A
25℃ -55℃ VGS = 4.5V, ID = 12.5A 30 40 50 60 70 80 90 100 ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
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20
0.6 -50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
DMT6005LSS
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Document number: DS38291 Rev. 2 - 2
DMT6005LSS
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (?)
0.014
V , GATE THRESHOLD VOLTAGE (V) GS(TH) 0.012
4 3.5 3 2.5 2 1.5 1 0.5 0
-50
ID = 1mA
0.01
VGS = 4.5V, ID = 12.5A 0.008 0.006 0.004 0.002
0 -50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
VGS = 10V, ID = 50A
ID = 250μA -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
100
10000 CT, JUNCTION CAPACITANCE (pF) VGS = 0V f=1MHz Ciss 90
Is, SOURCE CURRENT (A) 80 70 60 50 40 30 20 10
TJ = 125oC TJ = 150oC TJ = 85oC TJ = 25oC TJ = -55oC
1000 100
10
0
5
Coss
Crss
0 0
0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current
10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance
40
10
9
0 5 100 R DS(ON) Limited 10 PW =100μs 8 7
ID, DRAIN CURRENT (A)
VGS (V) 6 5 4 3
VDS = 30V, ID = 50A
2
1
0
10 15 20 25 30 35 40 45 50 Qg (nC)
Figure 11. Gate Charge
1 PW =1ms PW =10ms PW =100ms PW =1s 0.1 ℃ J(Max) = 150℃ T = 25C T Single Pulse PW =10s DUT on 1*MRP Board DC GS V = 10V 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area
100 DMT6005LSS
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1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.7 D=0.5 D=0.3 D=0.9 0.1
D=0.1 D=0.0 5 D=0.02 0.01
D =0 .0 1 D=0.005
D=Single Pulse 0.001
1E-05
0.0001
0.001
RθJA(t) = r(t) * RθJA RθJA = 95℃/W Duty Cycle, D = t1 / t2 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance
10 100 1000
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
SO-8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82 ??0??8??All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
X
C1 C2
Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27
Y DMT6005LSS
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IMPORTANT NOTICE
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