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MEMORY存储芯片PTVS3V3S1UTR中文规格书

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Nexperia

PTVSxS1UR series

400 W Transient Voltage Suppressor

150IPP(%)100100 % IPP; 10 μs006aab3191.2PPPMPPPM(25°C)0.8006aab32150 % IPP; 1000 μs500.4001.02.03.0tp (ms)4.00050100150Tj (°C)200Fig 1.10/1000μs pulse waveform according to IEC61643-321Fig 2.Relative variation of rated peak pulse power as a function of junction temperature; typical values006aab418105PPPM(W)104(1)(2)10310210?1110102103tp (μs)104Tamb=25°C(1)PTVS5V0S1UR to PTVS64VS1UR(2)PTVS3V3S1URFig 3.Rated peak pulse power as a function of pulse duration; typical valuesPTVSxS1UR_SERAll information provided in this document is subject to legal disclaimers.

? Nexperia B.V. 2017. All rights reserved

Product data sheetRev. 3 — 10 January 2011 6 of 12

Nexperia

PTVSxS1UR series

400 W Transient Voltage Suppressor

I?VCL?VBR?VRWM?IRM?IR?P-N+V?IPP?IPPM006aab324Fig 4.V-Icharacteristics for a unidirectional TVSprotection diode8.Test information

8.1Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

9.Package outline

1.91.511.10.90.60.33.73.32.82.421.050.75Dimensions in mm0.220.1008-11-06Fig 5.Package outline SOD123WPTVSxS1UR_SERAll information provided in this document is subject to legal disclaimers.

? Nexperia B.V. 2017. All rights reserved

Product data sheetRev. 3 — 10 January 2011 7 of 12

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