[6] Larsen-Basse J, Liang H. Probable role of abrasion in chemo-mechanical polishing of tungsten. Wear 1999;233-235:647–54.
[7] Cook LM. Chemical process in glass polishing. Journal of Non- Crystalline Solids 1990;120:152–71.
[8] Tomozawa M. Oxide CMP mechanisms. Solid State Technology 1997;40:39–53. [9] Shouhong Tang, 高仰月译. 用白光干涉测量法描述化学机械抛光面[J].电子工业专用设备, 2006, 141, 19-23.
[10] 雷红,CMP后清洗技术的研究进展[J].上海大学纳米科学与技术研究中心, 2008;200444.
[11] Nogami M, Tomozawa M. Effect of stress on water diffusion in silica glass.Journal of the American Ceramic Society 1984;67:151–4.
[12] Preston FW. The theory and design of plate glass polishing machine. Journal of the Society of Glass Technology 1927;11:214–56.
[13] H.S.Leea,H.D.Jeonga,D.A.Dornfeld,Semi-empirical material removal rate distribution model for SiO2 chemical mechanical polishing(CMP) [J].processes Precision Engineering.37.(2013);483–490.
[14] Greenwood JA,Williamson JBP.Contact of nominally flat surfaces. Proceedings of the Royal Society A 1966;95:300–19.
[15] Johnson KL. Contact mechanics. Cambridge: Cambridge University Press; 1985. [16] Zhao Y, Chang L. A micro-contact and wear model for chemical–mechanical polishing of silicon wafers. Wear 2002;252:220–6.
[17] Lee H, Jeong H. A wafer-scale material removal rate profile model for copper chemical mechanical planarization.International Journal of Machine Tools and Manufacture 2011;51:395–403.
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