JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JCET
SOT-23 Plastic-Encapsulate Transistors
SOT-23 1. BASE 2. EMITTER 3. COLLECTOR
S9015 TRANSISTOR (PNP)
FEATURES
Complementary to S9014 MARKING: M6
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO VEBO Emitter-Base Voltage Collector Current IC Collector Power Dissipation PC Thermal Resistance From Junction To Ambient RΘJA Junction Temperature Tj Storage Temperature Tstg
Value -50 -45 -5 -100 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC = -0.1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 Collector cut-off current ICBO VCB=-50 V, IE=0 Emitter cut-off current IEBO VEB= -5V, IC=0 DC current gain hFE VCE=-5V, IC= -1mA Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA VCE=-5V, IC= -10mA fT Transition frequency f=30MHz CLASSIFICATION OF hFE Rank Range
L 200-450 Min -50 -45 -5 Typ Max Unit V V V -0.1 -0.1 1000 -0.3 -1 200 μA μA V V MHz 150 H 450-1000 1 A,Jun,2014
Typical Characteristics
-8
Static Characteristic
COMMONEMITTERTa=25℃
1000
hFE —— IC
Ta=100℃-20uA
-16uA
(mA)-6
-18uA
-14uA
COLLECTORCURRENT-4DCCURRENTGAIN
-0-12uA
IB=-2uA-4uA-6uA-8uA 100
-10uA-2hFE
Ta=25℃ -0
-1
COLLECTOR-EMITTER VOLTAGE V (V)
V —— I
-2-4-6-8CE10-0.1CEsatC
COLLECTOR CURRENT I (mA)
V —— I
-1-10-100C
COMMON EMITTERVCE= -5V
-2
BEsatCCOLLECTOR-EMITTERSATURATIONVOLTAGEVCEsat(V)BASE-EMITTERSATURATIONVOLTAGEVBEsat(V)
-0.1aTa=25℃
T=100℃
β=10
-1
Ta=25℃
Ta=100℃
β=10 -0.01 -0.2
-0.1
-100 COLLECTOR CURRENT I (mA)
I —— V
-1-10-100C -0.2
CBE
1000
COLLECTOR CURRENT I (mA)
I f ——
-1-10-100CTC(mA)-10
Ta=100℃
TRANSITIONFREQUENCY COLLECTORCURRENT100
Ta=25℃-1
COMMON EMITTER-0.1-0.0(MHz)
COMMON EMITTERVCE=-5VTa=25℃-1-10
VCE=-5V
-1.2
-0.3
-0.6
BASE-EMMITER VOLTAGE
VBE (V)
-0.9
30
Cob/ Cib —— VCB/ VEB
f=1MHzIE=0/IC=0Ta=25 ℃
COLLECTOR CURRENT I (mA)
P —— T
10-0.1-100C
250
Ca
COLLECTORPOWERDISSIPATIONPC(mW)200
(pF)10
Cib
150
Cob
CAPACITANCE C
100
50
1
-0.1
-1
REVERSE VOLTAGEVR(V)
-10
-20
2
0
0
AMBIENT TEMPERATURE T (℃)
255075100125150a
A,Jun,2014
SOT-23 Package Outline Dimensions
Symbol A A1 A2 b c D E E1 e e1 L L1 θ
Dimensions In Millimeters Dimensions In Inches MinMaxMinMax 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 0.300 0.500 0.012 0.020 0.080 0.150 0.003 0.006 2.800 3.000 0.110 0.118 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100
0.950 TYP0.037 TYP 1.800 2.0000.071 0.079
0.550 REF0.022 REF
0.020 0.300 0.5000.012
0° 8° 0° 8°
SOT-23 Suggested Pad Layout
3
A,Jun,2014
SOT-23 Tape and Reel
4
A,Jun,2014
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