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XB5353A

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XB5353A

__________________________________________________________________________________________ ____________

3. Charger Detection

VCUVCU-VHCBatteryvoltageVDL+VDHVDL

ON

DISCHARGE

OFFVDDVM

VSSVCHACharger connectionLoad connectiontDL(1)(3)(1)

Figure5-3 Charger Detection

4. Abnormal Charger Detection

VCUVCU-VHCBatteryvoltageVDL+VDHVDL

ON

DISCHARGE

OFF ON

CHARGE

OFFVDDVM

VSSVCHACharger connectionLoad connectiontDL(1)(3)tCU(1)(2)(1)

Figure5-4 Abnormal Charger Detection

Remark: (1) Normal condition (2) Overcharge voltage condition (3) Overdischarge voltage condition (4)

Overcurrent condition

XySemi Inc - 9 -

REV0.1

XB5353A

__________________________________________________________________________________________ ____________ TYPICAL CHARACTERISTICS

(Test based on XB5353A version, VBAT = 3.6V, TA= 25°C unless otherwise specified) Internal FET On-Resistance vs. Junction Temperature

TYPICAL APPLICATION

As shown in Figure 6, the bold line is the high density current path which must be kept as short as possible. For thermal management, ensure that these trace widths are adequate. C1 is a decoupling capacitor which should be placed as close as possible to XB5353.

Fig 6 XB5353 in a Typical Battery Protection Circuit

Precautions

? Pay attention to the operating conditions for input/output voltage and load current so that the power loss in XB5353 does not exceed the power dissipation of the package.

? Do not apply an electrostatic discharge to this XB5353 that exceeds the performance ratings of the built-in electrostatic protection circuit.

XySemi Inc - 10 -

REV0.1

XB5353A

__________________________________________________________________________________________ ____________ PACKAGE OUTLINE

SOT23-5 PACKAGE OUTLINE AND DIMENSIONS

XySemi Inc - 11 -

DIMENSION

SYMB

IN

DIMENSION

OL

MILIMETERS IN INCHES

MIN

MAX MIN MAXA 1.0501.250 0.041 0.049A1 0.0000.100 0.000 0.004A2 1.0501.150 0.041 0.045b 0.3000.400 0.012 0.016c 0.1000.200 0.004 0.008D 2.8203.020 0.111 0.119E 1.5001.700 0.059 0.067E1 2.6502.950 0.104 0.116

e 0.950 TYP 0.037 TYP e1 1.8002.000 0.071 0.079L

0.700 REF

0.028 REF

L1 0.3000.600 0.012 0.024

θ 0° 8° 0° 8°

REV0.1

XB5353A

__________________________________________________________________________________________ ____________

DISCLAIMER

The information described herein is subject to change without notice.

Xysemi Inc. is not responsible for any problems caused by circuits or diagrams described herein whose ralated industial properties,patents,or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design.

When the products described herein are regulated products subject to the Wassenaar Arrangement or other arrangements, they may not be exported without authorization from the appropriate governmental authority.

Use of the information described herein for other purposes and/or reproduction or copying without express permission of Xysemi Inc. is strictly prohibited.

The products described herein cannot be used as part of any device or equipment affecting the human body,such as exercise equipment ,medical equipment, security systems, gas equipment,or any aparatus installed in airplanes and other vehicles,without prior written pemission of Xysemi Inc.

Although Xysemi Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor may occur. The use of these products should therefore give thorough consideration to safty design,including redundancy, fire-prevention measure and malfunction prevention, to prevent any accidents,fires,or community damage that may ensue.

XySemi Inc - 12 -

REV0.1

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