电子元器件ZVN3320F中文资料 - 数据手册 - IC数据表

SOT23N-CHANNELENHANCEMENTMODE VERTICALDMOS FET

ISSUE3 –DECEMBER 1995FEATURES

*200VoltVDS*RDS(on)=25?

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ZVN3320F

SDGPARTMARKING DETAIL–MU

ABSOLUTEMAXIMUMRATINGS.PARAMETERDrain-SourceVoltagehttps://www.ichunt.comSYMBOLVDSIDIDMVGSPtotTj:TstgVALUE200601±20330-55to +150UNITVmAAVmW°CSOT23ContinuousDrainCurrentatTamb=25°CPulsedDrainCurrentGate-SourceVoltagePowerDissipationatTamb=25°COperatingandStorageTemperatureRangeELECTRICALCHARACTERISTICS(at Tamb= 25°Cunlessotherwisestated).PARAMETERDrain-SourceBreakdownVoltageGate-SourceThresholdVoltageGate-BodyLeakageZeroGateVoltageDrainCurrentOn-StateDrainCurrent(1)StaticDrain-SourceOn-StateResistance(1)ForwardTransconductance(1)(2)InputCapacitance(2)CommonSourceOutputCapacitance(2)ReverseTransferCapacitance(2)Turn-OnDelayTime(2)(3)RiseTime(2)(3)Turn-OffDelayTime(2)(3)FallTime(2)(3)SYMBOLMIN.BVDSSVGS(th)IGSSIDSS2001.03.010010502502575451855766MAX.UNITCONDITIONS.VVnAμAμAmA?mSpFpFpFnsnsnsnsVDD≈25V,ID=100mAVDS=25V,VGS=0V,f=1MHzID=1mA,VGS=0VID=1mA,VDS=VGSVGS=±20V,VDS=0VVDS=200V,VGS=0VVDS=160V,VGS=0V,T=125°C(2)VDS=25V,VGS=10VVGS=10V,ID=100mAVDS=25V,ID=100mAID(on)RDS(on)gfsCissCossCrsstd(on)trtd(off)tf(1) Measuredunderpulsed conditions.Width=300μs.Dutycycle≤2% (2) Sample test.

(3) Switchingtimes measuredwith 50?source impedance and<5nsrise time on a pulse generator

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