PT91_21B_TR10

Technical Data Sheet

1.9mm Round Subminiature “Z-Bend” Lead Phototransistor

PT91-21B/TR10 Features

?Fast response time ?High photo sensitivity ?Small junction capacitance

?Compatible with infrared and vapor phase reflow solder process. ?Pb free

?The product itself will remain within RoHS compliant version.

Descriptions

?PT91-21B/TR10 is a phototransistor in miniature SMD package which is molded in black plastic with spherical top view

lens. The device is spectrally matched to infrared emitting diode.

Applications

?Miniature switch ?Counters and sorter ?Position sensor

?Infrared applied system

Device Selection Guide LED Part No.

Everlight Electronics Co., Ltd. http:\\\\www.everlight.com Rev 5 Page: 1 of 10 Device No：DTT-091-001 Prepared date：06-02-2006 Prepared by：Jaine Tsai

Chip

Material

Lens Color

PT Silicon Black

PT91-21B/TR10 Package Dimensions Collector EmitterNotes: 1.All dimensions are in millimeters 2.Tolerances unless dimensions ±0.1mm Absolute Maximum Ratings (Ta=25℃) Parameter SymbolCollector-Emitter Voltage Collector Current Operating Temperature Storage Temperature Soldering Temperature Power Dissipation at(or below) 25℃Free Air Temperature Rating Units VCEO 30 V Emitter-Collector-Voltage VECO 5 V IC 20 mA ℃ Topr -25 ~ +85 Tstg -40 ~ +85 ℃ Tsol 260 ℃ Pc 75 mW Notes: *1:Soldering time≦5 seconds. Everlight Electronics Co., Ltd. http:\\\\www.everlight.com Rev 5 Page: 2 of 10 Device No：DTT-091-001 Prepared date：06-02-2006 Prepared by：Jaine Tsai

PT91-21B/TR10

Electro-Optical Characteristics (Ta=25℃)

Parameter Symbol Condition MinTyp MaxUnit

Rang Of Spectral Bandwidth Wavelength Of Peak Sensitivity Collector-Emitter Breakdown

Voltage

Emitter-Collector Breakdown Voltage

Collector-Emitter Saturation Voltage

Collector Dark Current

λ0.5 --- 730 --- 1100nm λP --- --- 940 --- nm BVCEO BVECO VCE(sat) ICEO

IC=100μA

Ee=0mW/cm2 IE=100μA Ee=0mW/cm2 IC=2mA Ee=1m W/cm2 VCE=20V Ee=0mW/cm2 VCE=5V Ee=1mW /cm2

30 --- --- V 5 --- --- V --- --- 0.4 V --- --- 100 nA On State Collector Current Rise Time Fall Time

IC(ON) 1.0 1.5 mA

tr --- 15 --- VCE=5V

μS IC=1mA

tf --- 15 --- RL=1000?

Everlight Electronics Co., Ltd. http:\\\\www.everlight.com Rev 5 Page: 3 of 10 Device No：DTT-091-001 Prepared date：06-02-2006 Prepared by：Jaine Tsai

PT91-21B/TR10 Typical Electro-Optical Characteristics Curves Fig.1Collector Power Dissipation vs. Fig.2 Spectral Sensitivity Ambient Temperature 100806040200 1.0Ta=25°C0.80.60.40.2-250255075851000700800900100011001300Fig.3 Relative Collector Current vs. Fig.4 Collector Current vs. Ambient Temperature Irradiance 10160140120100806040200010202C10.10.010.0010.0130405060700.11210 Everlight Electronics Co., Ltd. http:\\\\www.everlight.com Rev 5 Page: 4 of 10 Device No：DTT-091-001 Prepared date：06-02-2006 Prepared by：Jaine Tsai PT91-21B/TR10 Typical Electro-Optical Characteristics Curves Fig.5 Collector Dark Current vs. Fig.6 Collector Current vs. Ambient Temperature Collector-Emitter Voltage 10141210101086101002550751004200 1234 Everlight Electronics Co., Ltd. http:\\\\www.everlight.com Rev 5 Page: 5 of 10 Device No：DTT-091-001 Prepared date：06-02-2006 Prepared by：Jaine Tsai