FLASH MEMORY DEVICE AND READ METHOD THEREOF

FLASH MEMORY DEVICE AND READ METHOD

THEREOF

申请(专利)号： KR20070120845

专利号： KR101416740B1 主分类号： G06F12/00 申请权利人：

申请日： 2007-11-26 公开公告日： 2014-07-09

分类号： G06F12/00 发明设计人： ???;

??? 申请国代码： KR

优先权： 20071126 KR

20070120845

摘 要 附 图：

公开国代码： KR 优先权国家： KR

摘 要：

This is separated into a flash memory device disclosed in the first group and the second group and the first and second a memory block having the word lines are arranged between the selection line ; This depending on whether the selected word line belongs to which one of said first and second groups , determining the first and second read voltage to be applied to the active sequence , and the unselected word lines of the first and second select lines control logic ; And during a read operation , the selected word line in the non-driving of the first and second read voltage, and a row selection circuit of the first and second choice for active lines according to the result determined by the control logic . 主权项：

? 1 ??? ? 2 ???? ???? ? 1 ? ? 2 ?? ??? ??? ??? ?? ???? ?? ??? ??;/n??? ?? ??? ?? ? 1 ? ? 2 ??? ? ??

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