LP9435

LESHAN RADIO COMPANY, LTD.

30V P-Channel Enhancement-Mode MOSFET

VDS= -30V

RDS(ON), Vgs@-10V, Ids@-5.3A = 70m?RDS(ON), Vgs@-4.5V, Ids@-4.2A = 100m?

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM

LP9435LT1G

3

1

2

SOT– 23 (TO–236AB)

D▼ Simple Drive Requirement▼ Small Package Outline▼ Surface Mount Device

GSOrdering Information

Device LP9435LT1G

Marking

P94

Shipping 3000/Tape&Reel

LP9435LT3G 10000/Tape&ReelP94

Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)

Symbol

Parameter

Limit

Unit

VDSVGSIDIDMPDTJ, TstgRθJCRθJA

Drain-Source VoltageGate-Source VoltageContinuous Drain CurrentPulsed Drain Current

1)

o

TA = 25C

-30± 20-5.3-202.51.2-55 to 150

2462.5

o

V

A

Maximum Power Dissipation

TA = 75C

o

W

o

Operating Junction and Storage Temperature RangeJunction-to-Case Thermal Resistance

Junction-to-Ambient Thermal Resistance (PCB mounted) 2)

2. 1-in2 2oz Cu PCB board

3. Guaranteed by design; not subject to production testing

C

C/W

Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature

1/4

LESHAN RADIO COMPANY, LTD.

ELECTRICAL CHARACTERISTICSSymbolStatic

BVDSSRDS(on)RDS(on)VGS(th)IDSSIGSSgfs

Drain-Source Breakdown VoltageDrain-Source On-State ResistanceDrain-Source On-State ResistanceGate Threshold VoltageZero Gate Voltage Drain CurrentGate Body LeakageForward Transconductance

VGS = 0V, ID = -250uA

-30

LP9435LT1G

Test Condition

Min

Typ

Max

Unit

VmΩVuAnAS

Parameter

VGS = -4.5V, ID = -4.2A 100.070.0VGS = -10V, ID = -5.3A 70.050.0VDS =VGS, ID = -250uAVDS = -24V, VGS = 0VVGS = ± 20V, VDS = 0VVDS = -10V, ID = -5.3A

10

-1

-1.7

-31±100

Dynamic3)

QgQgsQgdtd(on)trtd(off)tfCissCossCrss

Total Gate ChargeGate-Source ChargeGate-Drain ChargeTurn-On Delay TimeTurn-On Rise TimeTurn-Off Delay TimeTurn-Off Fall TimeInput CapacitanceOutput Capacitance

Reverse Transfer Capacitance

VDS = -15V, VGS = 0Vf = 1.0 MHz

VDD = -15V, RL = 15?ID = -1A, VGEN = -10V RG = 6??

VDS =-15V, ID = -5.3AVGS = -10V

28379157540745440120

pFnsnC

Source-Drain Diode

ISVSD

Max. Diode Forward CurrentDiode Forward Voltage

IS = -2.6A, VGS = 0V

-2.6-1.3

AV

NotePulse test: pulse width <= 300us, duty cycle<= 2%:

2/4

LESHAN RADIO COMPANY, LTD.

LP9435LT1G

TYPICAL ELECTRICAL CHARACTERISTICS

3/4

LESHAN RADIO COMPANY, LTD.

LP9435LT1G

SOT-23

NOTES:

AL31V

G2BS1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M,1982

2. CONTROLLING DIMENSION: INCH.DIMABCDGHJKLSV

INCHESMINMAX0.11020.11970.04720.05510.03500.04400.01500.02000.07010.08070.00050.00400.00340.00700.01400.02850.03500.04010.08300.10390.01770.0236

MILLIMETERS

MINMAX2.803.041.201.400.891.110.370.501.782.040.0130.1000.0850.1770.350.690.891.022.102.640.450.60

CDHKJ0.0370.950.0370.950.0792.00.0350.90.0310.8inchesmm4/4