Packaging
Package Dimensions
Figure 8: 84-Ball FBGA Package (8mm x 12.5mm) – x16 Die Rev :H
0.155Seating plane1.8 CTRNonconductiveovermold
84X ?0.45Dimensions applyto solder ballspost-reflow on?0.35 SMD ball pads.A0.12ABall A1 ID987321ABCDEFGHJKLMNPRBall A1 ID12.5 ±0.111.2 CTR0.8 TYP0.8 TYP6.4 CTR8 ±0.1Notes:
1.1 ±0.10.25 MINExposed gold plated pad1.0 MAX X 0.7 nominal.1.All dimensions are in millimeters.
2.Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu) or leaded Eutectic (62% Sn,
36%Pb, 2% Ag).
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1GbDDR2.pdf – Rev. Y 02/14 EN
1Gb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – Absolute Ratings
Die RevisionPackage60-ballH184-ball60-ballM184-ballSubstrate(pcb)2-layer4-layer2-layer4-layerLow ConductivityHigh ConductivityLow ConductivityHigh Conductivityθ JA (°C/W)θ JA (°C/W)θ JA (°C/W)Airflow = 0m/sAirflow = 1m/sAirflow = 2m/sθ JB (°C/W)θ JC (°C/W)72.554.568.851.385.463.280.859.755.545.752.042.770.656.167.053.349.542.346.539.664.552.861.650.735.635.232.532.342.844.711.711.75.65.7Note:
1.Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.
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1GbDDR2.pdf – Rev. Y 02/14 EN
1Gb: x4, x8, x16 DDR2 SDRAM
Output Electrical Characteristics and Operating Conditions
Output Electrical Characteristics and Operating Conditions
Table 18: Differential AC Output Parameters
ParameterAC differential cross-point voltageAC differential voltage swingNote:
SymbolVOX(AC)VswingMin0.50 × VDDQ - 1251.0Max0.50 × VDDQ + 125–UnitsmVmVNotes11.The typical value of VOX(AC) is expected to be about 0.5 × VDDQ of the transmitting de-vice and VOX(AC) is expected to track variations in VDDQ. VOX(AC) indicates the voltage atwhich differential output signals must cross.
Figure 15: Differential Output Signal Levels
VDDQ
VTRVswingCrossing pointVOX
VCPVSSQ
Table 19: Output DC Current Drive
ParameterOutput MIN source DC currentOutput MIN sink DC currentNotes:
SymbolIOHIOLValue–13.413.4UnitsmAmANotes1, 2, 42, 3, 41.For IOH(DC); VDDQ = 1.7V, VOUT = 1,420mV. (VOUT - VDDQ)/IOH must be less than 21Ω for val-ues of VOUT between VDDQ and VDDQ - 280mV.
2.For IOL(DC); VDDQ = 1.7V, VOUT = 280mV. VOUT/IOL must be less than 21Ω for values of VOUT
between 0V and 280mV.
3.The DC value of VREF applied to the receiving device is set to VTT.
4.The values of IOH(DC) and IOL(DC) are based on the conditions given in Notes 1 and 2. They
are used to test device drive current capability to ensure VIH,min plus a noise margin andVIL,max minus a noise margin are delivered to an SSTL_18 receiver. The actual current val-ues are derived by shifting the desired driver operating point (see output IV curves)along a 21Ω load line to define a convenient driver current for measurement.
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1Gb: x4, x8, x16 DDR2 SDRAM
Output Electrical Characteristics and Operating Conditions
Table 20: Output Characteristics
ParameterOutput impedancePull-up and pull-down mismatchOutput slew rateNotes:
Min01.5Nom––Max45UnitsΩΩV/nsNotes1, 21, 2, 31, 4, 5, 6See Output Driver Characteristics (page 53)1.Absolute specifications: 0°C ≤ TC ≤ +85°C; VDDQ = 1.8V ±0.1V, VDD = 1.8V ±0.1V.
2.Impedance measurement conditions for output source DC current: VDDQ = 1.7V; VOUT =
1420mV; (VOUT - VDDQ)/IOH must be less than 23.4Ω for values of VOUT between VDDQ andVDDQ - 280mV. The impedance measurement condition for output sink DC current: VDDQ= 1.7V; VOUT = 280mV; VOUT/IOL must be less than 23.4Ω for values of VOUT between 0Vand 280mV.
3.Mismatch is an absolute value between pull-up and pull-down; both are measured at
the same temperature and voltage.
4.Output slew rate for falling and rising edges is measured between VTT - 250mV and VTT
+250mV for single-ended signals. For differential signals (DQS, DQS#), output slew rateis measured between DQS - DQS# = –500mV and DQS# - DQS = 500mV. Output slew rateis guaranteed by design but is not necessarily tested on each device.
5.The absolute value of the slew rate as measured from VIL(DC)max to VIH(DC)min is equal to
or greater than the slew rate as measured from VIL(AC)max to VIH(AC)min. This is guaran-teed by design and characterization.
6.IT and AT devices require an additional 0.4 V/ns in the MAX limit when TC is between –
40°C and 0°C.
Figure 16: Output Slew Rate Load
VTT = VDDQ/2Output(VOUT)
25Ω
Reference point
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1GbDDR2.pdf – Rev. Y 02/14 EN
Preliminary
1Gb: x4, x8, x16 DDR2 SDRAMOutput Driver Characteristics
Output Driver Characteristics
Figure 17: Full Strength Pull-Down Characteristics
120100
80IOUT (mA)60
40
200
0.0
0.5
1.0
VOUT (V)
1.5
Table 21: Full Strength Pull-Down Current (mA)
Voltage (V)0.00.10.20.30.40.50.60.70.80.91.01.11.21.31.41.51.61.71.81.9Min0.004.308.6012.9016.9020.4023.2825.4426.7927.6728.3828.9629.4629.9030.2930.6530.9831.3131.6431.96Nom0.005.6311.3016.5222.1927.5932.3936.4540.3844.0147.0149.6351.7153.3254.956.0357.0758.1659.2760.35Max0.007.9515.9023.8531.8039.7547.7055.5562.9569.5575.3580.3584.5587.9590.7093.0095.0597.0599.05101.05PDF: 09005aef8565148a
1GbDDR2.pdf – Rev. Y 02/14 EN
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