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IRFP250中文资料

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元器件交易网

IRFP250

N-CHANNEL 200V - 0.073 - 33A TO-247

PowerMesh II MOSFET

TYPEIRFP250

sssss

VDSS200V

RDS(on)< 0.085

ID33 A

TYPICAL RDS(on) = 0.073

EXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARKGATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH II is the evolution of the firstgeneration of MESH OVERLAY . The layout re-finements introduced greatly improve the Ron*areafigure of merit while keeping the device at the lead-ing edge for what concerns swithing speed, gatecharge and ruggedness.

APPLICATIONS

sHIGH CURRENT, HIGH SPEED SWITCHINGsUNINTERRUPTIBLE POWER SUPPLIES (UPS)sDC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

SymbolVDSVDGRVGSIDIDIDM (q)PTOTdv/dt(1)TstgTj

Parameter

Drain-source Voltage (VGS = 0)Drain-gate Voltage (RGS = 20 k )Gate- source Voltage

Drain Current (continuos) at TC = 25°CDrain Current (continuos) at TC = 100°CDrain Current (pulsed)Total Dissipation at TC = 25°C

Derating Factor

Peak Diode Recovery voltage slopeStorage Temperature

Max. Operating Junction Temperature

Value200200±2033201321801.445–65 to 150

150

(1)ISD ≤33A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

UnitVVVA

AAWW/°CV/ns°C°C

( )Pulse width limited by safe operating area

Sep 20001/8

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