HYM4V33100DTYG-75中文资料

元器件交易网

1Mx32 bits

PC133 SDRAM AIMM

based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh

HYM4V33100DTYG Series

DESCRIPTION

The Hynix HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bitsCMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.

The Hyundai HYM4V33100DTYG Series are AGP In-line Memory Modules suitable for easy interchange and addition of 4Mbytesmemory. The Hyundai HYM4V33100DTYG Series are fully synchronous operation referenced to the positive edge of the clock . Allinputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very highbandwidth.

FEATURES

PC133/PC100MHz support132pin SDRAM AIMM

1.4” (35.56mm) Height PCB with double sided com-ponents

Single 3.3±0.3V power supply

- 1, 2, 4 or 8 or Full page for Sequential Burst

All device pins are compatible with LVTTL interface

- 1, 2, 4 or 8 for Interleave Burst

Data mask function by DQM

SDRAM internal banks : two banks

Programmable CAS Latency ; 2, 3 Clocks

Module bank : one physical bankAuto refresh and self refresh4096 refresh cycles / 64ms

Programmable Burst Length and Burst Type

ORDERING INFORMATION

Part No.

HYM4V33100DTYG-75

Clock Frequency

133MHz

InternalBank

4 Banks

Ref.

4K

Power

Normal

SDRAMPackage

TSOP-II

Plating

Gold

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of

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