IST 8310 datasheet 完整版
IST8310
IST8310 Datasheet, Version 1.2
13
5 Technology Overview
5.1 AMR Technology
IST8310, an iSentek patented magnetometer is designed based on Anisotropy Magneto-Resistance (AMR) technology. The output is generated from the resistance change of the AMR resistors while external magnetic field changes. The sensitivity is about 50 to 200 times larger than traditional Hall element. The high sensitivity allows higher output data rate (ODR), lower noise and lower power consumption.
5.2 High Reliability Planarized Structure Design
IST8310 consists of three full Whetstone Bridge of AMR resistors. The three bridges detecting magnetic component in three directions orthogonal to each other are located on one chip, wire-bonded to a control ASIC. This planarized structure design enables outstanding stability to thermal shock, making our device highly reliable, immune from thermal reflow-induced failure. While other known AMR magnetometers placing z-axis sensor vertical to the substrate using 90-degree flip-chip packaging suffers from reliability issues
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