5962R9689104VYC中文资料

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Standard Products

Data Sheet

December 2002

UT28F256 Radiation-Hardened 32K x 8 PROM

FEATURES

qProgrammable, read-only, asynchronous, radiation-hardened, 32K x 8 memory

-Supported by industry standard programmerq45ns and 40ns maximum address access time (-55 oC to +125 oC)

qTTL compatible input and TTL/CMOS compatible output levelsqThree-state data bus

qLow operating and standby current

-Operating: 125mA maximum @25MHz Derating: 3mA/MHz

-Standby: 2mA maximum (post-rad)qRadiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019-Total dose: 1E6 rad(Si)

- LETTH(0.25) ~ 100 MeV-cm2/mg

-Memory cell LET threshold: >128 MeV-cm2/mg

qQML Q & V compliant part-AC and DC testing at factory

qPackaging options:

-28-lead 50-mil center flatpack (0.490 x 0.74)

-28-lead 100-mil center DIP (0.600 x 1.4) - contact factoryqVDD: 5.0 volts 10%

q Standard Microcircuit Drawing 5962-96891

PRODUCT DESCRIPTION

The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened,

32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256. The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256 ideal for high speed systems designed for operation in radiation environments.

- 2/mg

- Saturated Cross Section cm2 per bit, 1.0E-11

- 1.2E-8 errors/device-day, Adams 90% geosynchronous

heavy ion

A(14:0)DECODER

MEMORYARRAY

SENSE AMPLIFIER

CEPEOE

PROGRAMMING

CONTROLLOGIC

DQ(7:0)

Figure 1. PROM Block Diagram

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