5962R9689104VYC中文资料(6)

A(14:0)CE

OE

Figure 2. PROM Read Cycle

RADIATION HARDNESS

The UT28F256 PROM incorporates special design and layout features which allow operation in high-level radiation

environments. UTMC has developed special low-temperature processing techniques designed to enhance the total-dose

radiation hardness of both the gate oxide and the field oxide while RADIATION HARDNESS DESIGN SPECIFICATIONS 1Total Dose

Latchup LET Threshold Memory Cell LET ThresholdTransient Upset LET Threshold

Transient Upset Device Cross Section @ LET=128 MeV-cm2/mg

maintaining the circuit density and reliability. For transient radiation hardness and latchup immunity, UTMC builds all radiation-hardened products on epitaxial wafers using an advanced twin-tub CMOS process. In addition, UTMC pays special attention to power and ground distribution during the design phase, minimizing dose-rate upset caused by rail collapse.

1E6>128>128541E-6

rad(Si)MeV-cm2/mgMeV-cm2/mgMeV-cm2/mg

cm2

Note:

1.The PROM will not latchup during radiation exposure under recommended operating conditions.

5

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