东芝电子可靠性测试(21)

Energy as a Parameter

Numerous sets of data have been disclosed regarding the relationship between temperature and lifetime or failure rate of semiconductor devices. Some examples of data from experiments conducted by Toshiba are as follows:

(1) Temperature Acceleration of Intermetallic Formation of Bonding Wire

As temperature rises, intermetallic alloy begins to form at the junction of Au wire and the Al used on the pad, causing the contact resistance to increase and the contact to open. Figure 2.6 shows the relationship between the temperature and lifetime from the results of high-temperature storage testing.

From the lifetime values at different temperature conditions, it can be seen that the activation energy is approximately 1.0 eV.

东芝电子可靠性测试

Figure 2.6 Temperature Dependence of Formation of Intermetallic Alloy in Bonding Wire

(2) Temperature Acceleration on Different Semiconductor Devices

Various data have been reported for the relationship between the temperature and failure rate of semiconductor devices. Figure 2.7 shows an example of data obtained from this type of experiment. The figure gives the acceleration rate for each device.

105 104 Acceleration Rate

10

3

MOS IC

102 10 1

Bip IC

2.42.62.83.075

3.23.41/T × 103 (K 1)50

25

(°C)

150125100

Temperature

Figure 2.7 Example of Device Temperature Acceleration

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