东芝电子可靠性测试(7)

东芝电子可靠性测试

Table 1.2 TEG Evaluation Examples

TEG Structure MOS capacitor

Evaluation Target Gate oxide film breakdown Ion drift

Interface trap Process damage Variation in manufacturing conditions

Radiation effect

Design Process Parameter Gate film thickness

Gate film quality Oxidation methodGate film materialElectrode materialContamination Surface area Shape

Dimensions Gate size (W/L) Gate film thickness

Gate film quality Electrode materialContamination Passivation material Shape and structure

Ion implantation conditions Metallization material

Metallization widthMetallization space

搜索“diyifanwen.net”或“第一范文网”即可找到本站免费阅读全部范文。收藏本站方便下次阅读，第一范文网，提供最新外语学习东芝电子可靠性测试(7)全文阅读和word下载服务。