东芝电子可靠性测试(8)

Through-hole diameter

Contact diameterStep, hole shapeInterlayer insulating film Passivation Molding resin Shape,

dimensions, number of elements Gate film thickness

Gate film quality Interlayer film quality

Stress TemperatureVoltage Electric fieldCurrent

Evaluation Method TDDB (constant current, constant voltage, step stress) Oxide film breakdown voltage test

C-V (Pulse C-V) DLTS (deep level

transient spectroscopy)

Evaluation ParametersFailure rate vs. time Oxide film breakdown voltage

QBD (oxide film breakdown static charge)

Electric field acceleration coefficient

Activation energy COX (oxide film capacitance) Failure rate

Vth (threshold voltage degradation)

Id (drain current degradation)

gm (gm degradation) Voltage acceleration coefficient

Activation energy Sub-threshold characteristics

Field breakdown voltage Resistance change Failure rate vs. time Activation energy Current density dependence Open Short

MOS transistor

Hot carrier effect

Negative bias stability Ion drift

Interface trap Variation in manufacturing conditions

Process damage Short channel effect Field leak

TemperatureElectric fieldMechanical stress Current

High-temperature DC biasing

Low-temperature DC biasing

Charge pumping DC pulse

Multi-layer metallization (metal, diffusion layer, interlayer insulating film)

Stress Migration

Electromigration Contact open

Interlayer breakdown voltage Corrosion

TemperatureCurrent density

Temperature gradient Voltage Mechanical stress

Temperature and humidity

High temperature, constant current test High-temperature discharge

Temperature cycle Reflow process High-temperature, high-humidity biasing Pressure cooker

Function block

Process monitoring Failure rate estimation Process approval Humidity resistance

TemperatureHigh-temperature Voltage biasing (DC, pulse)

Low-temperature biasing (DC, pulse) High-temperature discharge, etc.

Failure rate vs. time Activation energy Voltage acceleration Standby current AC/DC parameters

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